Examination of collector current density distribution and detection of breakdown areas in power transistor / Zbigniew Suszyński, Piotr Majchrzak, Robert Arsoba.
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ArtykułJęzyk: angielski Szczegóły wydania: 2001.Tematy: Rodzaj/forma:
W: 25 International Conference and Exhibition IMAPS–Poland 2001 : Rzeszów–Polańczyk 26–29 September 2001. - Rzeszów, 2001. - s. 99-102Streszczenie: In this paper the IR mapping is used for the inspection of power transistor KT827B type. On the basis of amplitude and phase temperature images it is possible to observe such phenomena as concentrating of the variable component of collector current and areas of breakdown. The IR amplitude pictures give information about the distribution of dissipated power while the IR phase maps allow separating the electrical phenomena in time independently of its amplitude. The variable component of thermal fields gives more information and higher contrast then the constant one.
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sprawozdanie jednostki (Informator o publikowanych wynikach prac naukowo-badawczych w 2001 roku Wydziału Elektroniki).
In this paper the IR mapping is used for the inspection of power transistor KT827B type. On the basis of amplitude and phase temperature images it is possible to observe such phenomena as concentrating of the variable component of collector current and areas of breakdown. The IR amplitude pictures give information about the distribution of dissipated power while the IR phase maps allow separating the electrical phenomena in time independently of its amplitude. The variable component of thermal fields gives more information and higher contrast then the constant one.