Dane z Informatora o publikowanych wynikach prac naukowo-badawczych w 2001 roku Wydziału Elektroniki.

In this paper possibilities of quality adhesion assessment between silicon and molybdenum layers in powere thyristors are presented. For the structure diagnostic, the photothermal method was used. Amplitude and phase photothermal images show the same areas of delamination as the pictures from scanning acoustic microscope. In the contrary to the acoustic method, the photothermal one is non-contact and does not require the sample to be immersed in the coupling fluid. Three-layered thyristor structure are presented. Satisfactory accuracy of thermal properties determined by genetic algorithm was obtained.