Infrared investigation of power transistor / Z. Suszyński, P. Majchrzak, R. Arsoba.
Rodzaj materiału:
ArtykułJęzyk: angielski Szczegóły wydania: 2001.Tematy: Rodzaj/forma:
W: Proceedings of the 7 Therminic Workshop. - Paris, 2001. - s. 87-90Streszczenie: In this paper the IR mapping is used for the inspection of power transistor KT827B type. Based on amplitude and phase temperature images it is possible to observe such phenomena as concentrating of the variable component of collector current and the areas of breakdown. The IR amplitude pictures give information about the distribution of dissipated power while the IR phase maps allow separating the electrical phenomena in time independently of its amplitude. The variable component of thermal fields gives more information and higher contrast then the constant one.
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sprawozdanie jednostki (Informator o publikowanych wynikach prac naukowo-badawczych w 2001 roku Wydziału Elektroniki).
In this paper the IR mapping is used for the inspection of power transistor KT827B type. Based on amplitude and phase temperature images it is possible to observe such phenomena as concentrating of the variable component of collector current and the areas of breakdown. The IR amplitude pictures give information about the distribution of dissipated power while the IR phase maps allow separating the electrical phenomena in time independently of its amplitude. The variable component of thermal fields gives more information and higher contrast then the constant one.