01333nab a2200205 i 4500 BPP BPK 20160608103849.0 151208s2000 ne | | |000 ||eng BPK eng NLD PATRYN, Aleksy. 1996 - . Politechnika Koszalińska - Wydział Elektroniki, Katedra Elektroniki Ciała Stałego Evaluation of the intrinsic stress value in silicon wafers from photovoltage measurements / Aleksy Patrin. 2000. Dane z Informatora o publikowanych wynikach prac naukowo-badawczych w 2002 roku Wydziału Elektroniki. An approach was developed to estimate an intrinsic stress value in silicon from surface photovoltage measurements (SPV). The method is developed by taking into account the stress as a parameter varying the optical absorption spectrum, with the stress value used for proper linearization the SPV spectrum. The stress value may be obtained as a parameter giving the best fitting of the experimental data to the stright line. The approach may be applied for various types of monocrystalline and multicrystalline silicon samples, both as grown and after various technological treatments. W : Materials Science & Engineering. - 2000, Vol. A 288, s. 177-181 ART UKD 66 66