000			01333nab a2200205 i 4500
001			BPP
003			BPK
005			20160608103849.0
008			151208s2000 ne | | |000 ||eng
040			_cBPK
041			_aeng
044			_aNLD
100			_aPATRYN, Aleksy. _d1996 - . _bPolitechnika Koszalińska - Wydział Elektroniki, _cKatedra Elektroniki Ciała Stałego
245			_aEvaluation of the intrinsic stress value in silicon wafers from photovoltage measurements / _cAleksy Patrin.
260			_c2000.
500			_aDane z Informatora o publikowanych wynikach prac naukowo-badawczych w 2002 roku Wydziału Elektroniki.
520			_aAn approach was developed to estimate an intrinsic stress value in silicon from surface photovoltage measurements (SPV). The method is developed by taking into account the stress as a parameter varying the optical absorption spectrum, with the stress value used for proper linearization the SPV spectrum. The stress value may be obtained as a parameter giving the best fitting of the experimental data to the stright line. The approach may be applied for various types of monocrystalline and multicrystalline silicon samples, both as grown and after various technological treatments.
773			_iW : _tMaterials Science & Engineering. - _g2000, Vol. A 288, s. 177-181
942			_cART _2UKD
999			_c66 _d66