Evaluation of the intrinsic stress value in silicon wafers from photovoltage measurements / Aleksy Patrin.
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ArtykułJęzyk: angielski Szczegóły wydania: 2000.
W: Materials Science & Engineering. - 2000, Vol. A 288, s. 177-181Streszczenie: An approach was developed to estimate an intrinsic stress value in silicon from surface photovoltage measurements (SPV). The method is developed by taking into account the stress as a parameter varying the optical absorption spectrum, with the stress value used for proper linearization the SPV spectrum. The stress value may be obtained as a parameter giving the best fitting of the experimental data to the stright line. The approach may be applied for various types of monocrystalline and multicrystalline silicon samples, both as grown and after various technological treatments.
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An approach was developed to estimate an intrinsic stress value in silicon from surface photovoltage measurements (SPV). The method is developed by taking into account the stress as a parameter varying the optical absorption spectrum, with the stress value used for proper linearization the SPV spectrum. The stress value may be obtained as a parameter giving the best fitting of the experimental data to the stright line. The approach may be applied for various types of monocrystalline and multicrystalline silicon samples, both as grown and after various technological treatments.