Detection of loss of air-tightness regions in power transistor by photoacoustic mathod / Zbigniew Suszyński, Robert Arsoba, Piotr Majchrzak.
Rodzaj materiału:
ArtykułJęzyk: angielski Szczegóły wydania: 2001.Tematy:
W: 25 International Conference and Exhibition IMAPS–Poland 2001 : Rzeszów–Polańczyk 26–29 September 2001. - Rzeszów, 2001. - s. 271-274Streszczenie: In this paper opportunities of applying photoacoustic method to investigate the causes of loss of air-tightness in semiconductor devices are presented. Quality of joint of plastic with metal substrate in power transistors was examined. Images of transistor structures obtained with the help of photoacoustic microscope were interpreted basing on amplitude and phase frequency dependencies. In the consequence of analysing photoacoustic images the method for unambiguous recognition of delaminations, which are the cause of loss of air-tightness, was developed. This recognition can be carried out regardless of factors exerting influence on images such as geometrical changes and variations of physical parameters of examined object. The results obtained allow to optimise technological conditions of encapsulation process.
Dane z Informatora o publikowanych wynikach prac naukowo-badawczych w 2001 roku Wydziału Elektroniki.
In this paper opportunities of applying photoacoustic method to investigate the causes of loss of air-tightness in semiconductor devices are presented. Quality of joint of plastic with metal substrate in power transistors was examined. Images of transistor structures obtained with the help of photoacoustic microscope were interpreted basing on amplitude and phase frequency dependencies. In the consequence of analysing photoacoustic images the method for unambiguous recognition of delaminations, which are the cause of loss of air-tightness, was developed. This recognition can be carried out regardless of factors exerting influence on images such as geometrical changes and variations of physical parameters of examined object. The results obtained allow to optimise technological conditions of encapsulation process.